| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| YS/T 223-1996 |
Selenium |
120 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 14847-2010 |
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 29506-2013 |
300 mm polished monocrystalline silicon wafers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6619-2009 |
Test methods for bow of silicon wafers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 838-2012 |
Cadmium telluride |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24574-2009 |
Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 679-2008 |
Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 30453-2013 |
Metallographs collection for original defects of crystalline silicon |
1320 (USD) |
via email in
1-10 business day
|
VALID
|
|
| YS/T 26-1992 |
|
45 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 20866-2003 |
Specification for cross-pressing molybdenum-rhenium alloy pieces |
100 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 6617-2009 |
Test method for measuring resistivity of silicon wafer using spreading resistance probe |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 11396-2009 |
The sapphire substrates for nitride based light-emitting diode |
225 (USD) |
via email in
1-3 business day
|
|
|
| GB/T 12962-2015 |
Monocrystalline silicon |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 986-2014 |
Specification for serial alphanumeric marking of the front surface of wafers |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 30867-2014 |
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS 68-2004 |
Arsenic |
60 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| GB/T 1555-1997 |
Test methods for determining the orientation of a semiconductor single crystal |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 1555-2009 |
Testing methods for determining the orientation of a semiconductor single crystal |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 12965-1996 |
Monocrystalline silicon as cut slices and lapped slices |
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 14140-2009 |
Test method for measuring diameter of semiconductor wafer |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
