| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 8756-2018 |
Collection of metallographs on defects of germanium crystal |
660 (USD) |
via email in
1-5 business day
|
VALID
|
|
| YS/T 985-2014 |
Polished reclaimed silicon wafers |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24580-2009 |
Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 222-1996 |
Tellurium ingots |
120 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 14139-2009 |
Silicon epitaxial wafers |
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 30855-2014 |
GaP substrates for LED epitaxial chips |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 17169-1997 |
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection |
380 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| YS/T 23-1992 |
|
45 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24578-2009 |
Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24576-2009 |
Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14863-2013 |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
240 (USD) |
via email in
1-3 business day
|
|
|
| GB/T 25076-2010 |
Monocrystalline silicon of solar cell |
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 35310-2017 |
200 mm silicon epitaxial wafer |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 16596-2019 |
Specification for establishing a wafer coordinate system |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14146-2009 |
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 2881-2008 |
Silicon metal |
90 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| YS/T 15-1991 |
|
75 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 26069-2010 |
Specification for silicon annealed wafers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 979-2014 |
High purity gallium oxide |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 25076-2018 |
Monocrystalline silicon for solar cell |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
