Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
SJ 50033/160-2002 |
Semiconductor discrete devices Detail specification for type 3DG122 silicon UHF low-power transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
GB 6801-1986 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
GB 4937-1985 |
|
330 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
GB 12560-1990 |
Semiconductor devices--Sectional specification for discrete devices |
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
SJ 1605-1980 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
SJ 1604-1980 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
GB 4938-1985 |
Acceptance and reliability for discrete semiconductor devices |
120 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
SJ 50033/155-2002 |
Semiconductor discrete devices Detail specification for type 3DG252 sillcon microwave linearity transistor |
135 (USD) |
via email in
1-3 business day
|
VALID
|
|
ZB N 05005-1988 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
SJ 50033/159-2002 |
Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 1606-1980 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
SJ 1400-78 |
Letter symbols for parameters of semiconductor devices |
735 (USD) |
via email in
1-5 business day
|
VALID
|
|
SJ 50033/157-2002 |
Semiconductor discrete devices Detail specification for type 3DA506 silicon microwave pulse power transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 1607-1980 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
SJ 50033/156-2002 |
Semiconductor discrete devices Detail specification for type 3DA505 silicon microwave pulse power transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
GB 12300-1990 |
Test methods of safe operating area for power transistors |
75 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 1603-1980 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
DB52/T 1104-2016 |
Junction-to-case thermal resistance transient test method of semiconductor devices |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
SJ 50033/154-2002 |
Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistor |
135 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 50033/158-2002 |
Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
|