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Position: Standard Detail Info
SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
Standard No.: SJ 20016-1992 Status: VALID remind me the status change
Target Language: English File Format: PDF
Word Count: 5000 words Translation Price: 150 (USD) remind me the price change
Implemented on: 1992-05-01 Delivery: via email in 1 business day
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Standard No.: SJ 20016-1992
Chinese Name: 半导体分立器件 ＧＰ、ＧＴ和ＧＣＴ级３ＤＧ１８２型ＮＰＮ硅小功率高反压晶体管详细规范
English Name: Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
Professional Classification: A01 Technical Management
Professional Classification: SJ Professional Standard - Electronics
Issued by:
Issued on: 1992-02-01
Implemented on: 1992-05-01
Status: VALID
Target Language: English
File Format: PDF
Word Count: 5000 words
Translation Price: 150 (USD)
Delivery: via email in 1 business day
SJ 20016-1992 The following standards are cited：
SJ 20016-1992 Cited by the following standards：
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