Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180

SJ 1486-79 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180
Standard No.:	SJ 1486-79	Status:	VALID remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	6000 words	Translation Price:	180 (USD) remind me the price change Email:
Implemented on:	1980-06-01	Delivery:	via email in 1 business day
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Standard No.:	SJ 1486-79
Chinese Name:	３ＣＧ１８０型ＰＮＰ硅外延平面高频小功率高反压三极管
English Name:	Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180
Professional Classification:	F01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1979-09-11
Implemented on:	1980-06-01
Status:	VALID
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price:	180 (USD)
Delivery:	via email in 1 business day

SJ 1486-79 The following standards are cited：

SJ 1486-79 Cited by the following standards：